bd135 bd137 bd139.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bd135 bd137 bd139.pdf Principales características:

BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD135 45 V BD137 60 V BD139 80 V VCEO Collector-Emitter Voltage BD135 45 V BD137 60 V BD139 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 3.0 A IB Base Current 0.5 A PC Collector Dissipation (TC=25 C) 12.5 W PC Collector Dissipation (Ta=25 C) 1.25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 150 C Electrical Characteristics TC=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage BD135 IC =