bd136 bd138 bd140.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bd136 bd138 bd140.pdf Principales características:

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25 C) 12.5 W PC Collector Dissipation (Ta=25 C) 1.25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 150 C Electrical Characteristics TC=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustainin