fdd5n53 fdu5n53.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fdd5n53 fdu5n53.pdf Principales características:

January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capability factor correction. RoHS compliant D D G G S I-PAK D-PAK G S D FDD Series FDU Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted