Todos los transistores

 

fdmc7200s.pdf Principales características:

fdmc7200sfdmc7200s

June 2014 FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 m , 10 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel dual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 m at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5 A synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Q2 N-Channel Max rDS(on) = 10 m at VGS = 10 V, ID = 8.5 A Applications Max rDS(on) = 13.5 m at VGS = 4.5 V, ID = 7.2 A Mobile Computing RoHS Compliant Mobile Internet Devices General Purpose Point of Load Bottom Bottom VIN D1 VIN Q2 D1 5 4 Pin 1 VIN D1 GHS G1 VIN D1 6 3 7 2 GND S2 GND S2 GND 8 1 S2

 

Keywords - ALL TRANSISTORS. Principales características

 fdmc7200s.pdf Design, MOSFET, Power

 fdmc7200s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc7200s.pdf Database, Innovation, IC, Electricity

 

 

 


 
↑ Back to Top
.