fds4435a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fds4435a.pdf Principales características:

October 2001 FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior Low gate charge (21nC typical). switching performance. High performance trench technology for extremely These devices are well suited for notebook computer appli- low RDS(ON). cations load switching and power management, battery High power and current handling capability. charging circuits, and DC/DC conversion. D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Dr