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fga25n120ftd.pdf Principales características:

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February 2009 FGA25N120FTD tm 1200V, 25A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 25A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation with exceptional avalanche RoHS complaint ruggedness. This device is designed for soft switching applica- tions. Applications Induction heating and Microvewave oven Soft switching applications C G TO-3P E G C E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage 25 V Collector Current @ TC = 25oC50 A IC Collector Current @ TC = 100oC25 A ICM (1) Pulsed Collector Current 75 A IF Diode conti

 

Keywords - ALL TRANSISTORS. Principales características

 fga25n120ftd.pdf Design, MOSFET, Power

 fga25n120ftd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fga25n120ftd.pdf Database, Innovation, IC, Electricity

 

 

 


 
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