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fgpf4633.pdf Principales características:

August 2010 FGPF4633 330V PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. High input impedance Fast switching RoHS compliant Applications PDP System TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage 30 V @ TC = 25oC 300 A IC pulse(1)* Collector Current Maximum Power Dissipation @ TC = 25oC 30.5 W PD Maximum Power Dissipation @ TC = 100oC 12.2 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for soldering

Keywords - ALL TRANSISTORS. Principales características

 fgpf4633.pdf Design, MOSFET, Power

 fgpf4633.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fgpf4633.pdf Database, Innovation, IC, Electricity