fqd1n60tf fqd1n60tm fqu1n60tu.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fqd1n60tf fqd1n60tm fqu1n60tu.pdf Principales características:

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter FQD1N60 / FQU1N60 Units