huf75307t3st.pdf Principales características:
HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowest possible on-resistance per silicon area, resulting in Thermal Impedance SPICE Model outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored UIS Rating Curve charge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators, switching converter
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huf75307t3st.pdf Design, MOSFET, Power
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