Todos los transistores

 

hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Principales características:

hufa75307d3st_hufa75307p3_hufa75307d3_hufa75307d3shufa75307d3st_hufa75307p3_hufa75307d3_hufa75307d3s

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, Available on the WEB at www.fairchildsemi.com resulting in outstanding performance. This device is capable Peak Current vs Pulse Width Curve of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored UIS Rating Curve charge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators,

 

Keywords - ALL TRANSISTORS. Principales características

 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Design, MOSFET, Power

 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Database, Innovation, IC, Electricity

 

 

 


 
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