irfr214b irfu214b.pdf Principales características:
November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D D
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irfr214b irfu214b.pdf Design, MOSFET, Power
irfr214b irfu214b.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfr214b irfu214b.pdf Database, Innovation, IC, Electricity
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