mpsa56 mmbta56 pzta56.pdf Principales características:
February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltage VEBO -4.0 V Collector Current Continuous IC -500 mA Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes 1. These ratings are based on a maximum junction temperature of 150 C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. All voltages (V) and currents (A) are n
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Parámetros del transistor bipolar y su interrelación.
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