si4435dy.pdf Principales características:

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October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive Low gate charge (17nC typical) voltage ratings (4.5V 25V). Fast switching speed Applications Power management High performance trench technology for extremely low R DS(ON) Load switch Battery protection High power and current handling capability DD 5 4 D D D D 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Volt

 

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