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ssf10n60a.pdf Principales características:

SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 Continuous Drain Current (TC=25oC) 6.9 ID A Continuous Drain Current (TC=100oC) 4.3 IDM Drain Current-Pulsed 40 A 1 O VGS Gate-to-Source Voltage + V _ 30 EAS Single Pulsed Avalanche Energy 2 519 mJ O IAR Avalanche Current 6.9 A 1 O EAR Repetitive Avalanche Energy mJ 9 1 O dv/dt Peak Diode Recovery dv/dt 3 3.0 V/ns O Total Power Dissipation (TC=25oC) W 90 PD o Linear Derating Factor 0.72 C Operating J

Keywords - ALL TRANSISTORS. Principales características

 ssf10n60a.pdf Design, MOSFET, Power

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