fir4n60lg.pdf Principales características:
FIR4N60LG Advanced N-Ch Power MOSFET PIN Connection TO-252(D-PAK) General Description FIR4N60LG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The 1 improved planar stripe cell and the improved guard ring 3 terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation 2 mode. - - These devices are widely used in AC-DC power suppliers, DC DC converters and H-bridge PWM motor drivers. 1 3 Features 4A,600V,RDS(on) typ =2.0 @VGS=10V Low gate charge Marking Diagram Low Crss Fast switching YAWW Y = Year FIR4N60L Improved dv/dt capability A = Assembly Location WW = Work Week = Specific Device Code FIR4N60L un
Keywords - ALL TRANSISTORS. Principales características
fir4n60lg.pdf Design, MOSFET, Power
fir4n60lg.pdf RoHS Compliant, Service, Triacs, Semiconductor
fir4n60lg.pdf Database, Innovation, IC, Electricity
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet