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2n3906s.pdf Principales características:

2n3906s2n3906s

SEMICONDUCTOR 2N3906S TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 2 2N3906S 2A 3000/Tape & Reel 1 SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 40 Vdc Emitter Base Voltage V EBO 5.0 Vdc 1 Collector Current Continuous I C 200 mAdc BASE 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board(1) P D 225 mW T A =25 C Derate above 25 C 1.8 mW/ C 556 C/W JA Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25 C Derate above 25 C 2.4 mW/ C Thermal Resistance Junction to Ambient R JA 417 C/W Junction and Storage Temperature T J , T st

 

Keywords - ALL TRANSISTORS. Principales características

 2n3906s.pdf Design, MOSFET, Power

 2n3906s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906s.pdf Database, Innovation, IC, Electricity

 

 
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