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2n5401.pdf Principales características:

2n54012n5401

SEMICONDUCTOR 2N5401 TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAX E B 4.80 MAX G High Voltage(Max.160v) C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATINGS (Ta=25 unless otherwise noted) H J 14.00 0.50 + L 2.30 F F M 0.51 MAX Symbol Parameter Value Unit 1. EMITTER 1 2 3 VCBO Collector-Base Voltage -160 V 2. BASE VCEO Collector-Emitter Voltage -150 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A TO-92 PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-

 

Keywords - ALL TRANSISTORS. Principales características

 2n5401.pdf Design, MOSFET, Power

 2n5401.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5401.pdf Database, Innovation, IC, Electricity

 

 
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