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irf3205.pdf Principales características:

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SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Parameter Symbol Rating Unit 1.Gate 2.Drain 3.Source Drain-Source Voltage VDSS 55 V Drain Current ID(Tc=25 ) 110 A Drain Current ID(Tc=100 ) 80 A Pulsed Drain Current IDM 390 A Gate-Source Voltage VGSS 20 V Avalanche Current IAR 62 A Single Pulsed Avalanche Energy EAS 1050 mJ Repetitive Avalanche Energy EAR 20 mJ Total Power Dissipation PD(Tc=25 ) 200 W Junction and Storage Temperature Range TJ,TSTG -55 to 150 Electrical Characteristics(Ta=25 ) Parameter Symbol Test Conditions Min Typ Max Unit

 

Keywords - ALL TRANSISTORS. Principales características

 irf3205.pdf Design, MOSFET, Power

 irf3205.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3205.pdf Database, Innovation, IC, Electricity

 

 

 


 
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