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ss8050g.pdf Principales características:

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SS8050G Plastic-Encapsulate Transistors Simplified outline SS8050G TRANSISTOR NPN TO-92 Features Power Dissipation 1.EMITTER PCM 1 W (TA=25.) 2.BASE 2 W (TC=25.) 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 Tstg Storage Temperature -55-150 Electrical Characteristics Tamb=25 unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Emitter cut-off cur

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050g.pdf Design, MOSFET, Power

 ss8050g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050g.pdf Database, Innovation, IC, Electricity

 

 
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