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4n60 4n60f.pdf Principales características:

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GOFORD 4N60/4N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 2.5 4A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. Features 4A, 600V, RDS(on) = 2.5 @VGS = 10 V Ordering Information Low gate charge ( typical 16nC) PART NUMBER PACKAGE BRAND Fast switching 100% avalanche tested 4N60/4N60F TO-220/220F 0GFD Improved dv/dt capability Page 1 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD 4N60/4N60F Absolute Maximum Ratings TC = 25 Cunless otherwise noted Absolute Maximum

 

Keywords - ALL TRANSISTORS. Principales características

 4n60 4n60f.pdf Design, MOSFET, Power

 4n60 4n60f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 4n60 4n60f.pdf Database, Innovation, IC, Electricity

 

 
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