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2sd2101.pdf Principales características:

2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 3 k 150 3 (Typ) (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7V Collector current IC 10 A Collector peak current IC(peak) 15 A Collector power dissipation PC 2W PC*1 30 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note 1. Value at TC = 25 C. Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 200 V IC = 0.1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 200 V IC = 25 mA, RBE = voltage Collector to emitter sustain VCEO(SUS) 170 V IC

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 2sd2101.pdf Design, MOSFET, Power

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