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2sd2106.pdf Principales características:

2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 k 200 2 3 (Typ) (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 6A Collector peak current IC(peak) 10 A Collector power dissipation PC 2W PC*1 25 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note 1. Value at TC = 25 C. Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 0.1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 120 V IC = 25 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 7 V IE = 50 mA,

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 2sd2106.pdf Design, MOSFET, Power

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