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h4435s.pdf Principales características:

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Spec. No. MOS200101) HI-SINCERITY Issued Date 2008.01.12 Revised Date 2009.02.06 MICROELECTRONICS CORP. Page No. 1/5 H4435S 8-Lead Plastic SO-8 Package Code S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) H4435S Symbol & Pin Assignment Features 5 4 Pin 1 / 2 / 3 Source 6 3 Pin 4 Gate 7 2 RDS(on)=20m @VGS=-10V, ID=-9.1A Pin 5 / 6 / 7 / 8 Drain 8 1 RDS(on)=35m @VGS=-4.5V, ID=-6.9A Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 V ID Drain Current (Continuous) -9.1 A IDM Drain Current (Pulsed) *1 -50 A PD Total Power Dissipation @TA=25oC 2.5 W Tj, Tstg Operating and Storage Temperature Range -55 to +150 C R JA

 

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 h4435s.pdf Design, MOSFET, Power

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