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Spec. No. HE6712 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temperature ................................................................... -55 +150 C R1 R2 Junction Temperature .......................................................... +150 C Maximum E Maximum Power Dissipation Total Power Dissipation (TC=25 C) .................................................................................................................... 65 W Total Power Dissipation (TA=25 C) ..............................................................................

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