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bcv47.pdf datasheet:

bcv47

BCV47TRANSISTOR (NPN) SOT23 FEATURES High Collector Current High Current Gain MARKING:FG 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V V Emitter-Base Voltage 10 V EBOI Collector Current 500 mA CP Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 416 /W JATj Junction Temperature 150 T Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A, I =0 80 V (BR)CBO C ECollector-emitter breakdown voltage V I =10mA, I =0 60 V (BR)CEO C BEmitter-base breakdown voltage V I =10A, I =0 10 V (BR)EBO E CCollect

 

Keywords - ALL TRANSISTORS DATASHEET

 bcv47.pdf Design, MOSFET, Power

 bcv47.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bcv47.pdf Database, Innovation, IC, Electricity

 

 
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