hsw2n15.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hsw2n15.pdf Principales características:

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DS The HSW2N15 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typ gate charge for most of the synchronous buck converter applications. I 1.4 A D The HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available SOT23-6L Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 150 V DS V Gate-Source Voltage 20 V GS I =25 Continuous Drain Current, V @ 10V1 1.4 A D@T GS C I =100 Continuous Drain Current, V @ 10V1 0.88 A D@T GS C I Pulsed Drain Current2 5.6 A DM P =25 Total Power Dissipa