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2n3240.pdf Principales características:

isc Silicon NPN Power Transistor 2N3240 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C P Collector Power Dissipation@T =25 150 W C C T Junction Temperature 175 J Storage Temperature -65 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.17 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor

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