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2n4395.pdf Principales características:

isc Silicon NPN Power Transistor 2N4395 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current-Continuous 5 A C P Collector Power Dissipation@T =25 62 W C C T Junction Temperature 150 J Storage Temperature -65 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 2 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Tran

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