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2sb566.pdf Principales características:

isc Silicon PNP Power Transistor 2SB566 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Complement to Type 2SD476 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -4 A C I Collector Current-Peak -8 A CM Total Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor

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