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2sc1316.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1316 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 750 V CBO V Collector-Emitter Voltage 750 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 2 A C Collector Power Dissipation P 23 W C @ T =25 C T Junction Temperature -65 200 J T Storage Temperature Range -65 200 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 7.6 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconduct

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 2sc1316.pdf Design, MOSFET, Power

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