2sc3356.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sc3356.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 11 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 13 dB TYP. @V = 10 V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 3.0 V EBO I Collector Current-Continuous 0.1 A C Collector Power Dissipation P 0.2 W C @T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3356 ELECTRIC