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2sc6145.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6145 DESCRIPTION High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SA2223 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Signal transistors for audio amplifiers Audio market ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 230 V CBO V Collector-Emitter Voltage 230 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 15 A C I Base Current-Continuous 4.0 A B Collector Power Dissipation P 160 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2S

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 2sc6145.pdf Design, MOSFET, Power

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