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2sd1301.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1301 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 1A CE(sat) C Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 2 A C I Collector Current-Peak 8 A CM Collector Power Dissipation P 45 W C @ T = 25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is reg

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 2sd1301.pdf Design, MOSFET, Power

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