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2sd214.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD214 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 130 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 20 A CP Collector Power Dissipation P 100 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Sil

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 2sd214.pdf Design, MOSFET, Power

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