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2sd2140.pdf Principales características:

isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 140 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 7 A C I Collector Current-Pulse 12 A CP Collector Power Dissipation 80 @ T =25 C P W C Collector Power Dissipation 2.5 @ T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark i

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