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2sk566.pdf Principales características:

2sk5662sk566

isc N-Channel MOSFET Transistor 2SK566 FEATURES Drain Current I =2.9A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 2.9 A D P Total Dissipation @T =25 78 W D C Max. Operating Junction Temperature 150 T J Storage Temperature -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK566 ELECTRICA

 

Keywords - ALL TRANSISTORS. Principales características

 2sk566.pdf Design, MOSFET, Power

 2sk566.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk566.pdf Database, Innovation, IC, Electricity

 

 

 


 
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