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bd135 bd137 bd139.pdf Principales características:

bd135_bd137_bd139bd135_bd137_bd139

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD135 45 VCBO Collector-base voltage BD137 Open emitter 60 V BD139 100 BD135 45 VCEO Collector-emitter voltage BD137 Open base 60 V BD139 100 VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 2 A IBM Base current-Peak 1 A Pt Total power dissipation Tmb 70 8 W Tj Junction temperature 150 Tstg Storage temperature -65 150 Tamb Operating ambient temperature -65

 

Keywords - ALL TRANSISTORS. Principales características

 bd135 bd137 bd139.pdf Design, MOSFET, Power

 bd135 bd137 bd139.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bd135 bd137 bd139.pdf Database, Innovation, IC, Electricity

 

 

 


 
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