bd906.pdf datasheet:
isc Silicon PNP Power Transistor BD906DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)CEO(SUS)Complement to Type BD905Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -45 VCBOV Collector-Emitter Voltage -45 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -15 ACI Collector Current-Peak -20 ACMI Base Current -5 ABCollector Power DissipationP 90 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance, Junction to Case 1.
Keywords - ALL TRANSISTORS DATASHEET
bd906.pdf Design, MOSFET, Power
bd906.pdf RoHS Compliant, Service, Triacs, Semiconductor
bd906.pdf Database, Innovation, IC, Electricity
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