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fdpf085n10a.pdf Principales características:

isc N-Channel MOSFET Transistor FDPF085N10A FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 8.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GSS I Drain Current-Continuous;@Tc=25 40 A D I Drain Current-Single Pulsed 160 A DM P Total Dissipation 33.3 W D T Operating Junction Temperature -55 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 4.5 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark

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