Todos los transistores

 

ipd200n15n3.pdf Principales características:

ipd200n15n3ipd200n15n3

isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 50 A D I Drain Current-Single Pulsed 200 A DM P Total Dissipation @T =25 150 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 1 Channel-to-ambient thermal resistance /W Rth(j-a) 75 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Ch

 

Keywords - ALL TRANSISTORS. Principales características

 ipd200n15n3.pdf Design, MOSFET, Power

 ipd200n15n3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd200n15n3.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.