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ipp114n12n3.pdf Principales características:

isc N-Channel MOSFET Transistor IPP114N12N3 IIPP114N12N3 FEATURES Static drain-source on-resistance RDS(on) 11.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 120 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 75 A D I Drain Current-Single Pulsed 300 A DM P Total Dissipation @T =25 136 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 1.1 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc

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