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irf150.pdf Principales características:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF150 DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.055 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor controls High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 100 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=25 40 A D P Total Dissipation@TC=25 150 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 0.83 th j-c 1 i

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