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irf2807z.pdf Principales características:

irf2807zirf2807z

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 75 A D I Drain Current-Single Pulsed 350 A DM P Total Dissipation @T =25 170 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.88 /W Rth(ch-a) Channel-to-ambient thermal res

 

Keywords - ALL TRANSISTORS. Principales características

 irf2807z.pdf Design, MOSFET, Power

 irf2807z.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf2807z.pdf Database, Innovation, IC, Electricity

 

 

 


 
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