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irf3205s.pdf Principales características:

irf3205sirf3205s

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205S DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 55 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ T =25 110 A D C I Pulse Drain Current 390 A DM P Total Dissipation@T =25 200 W tot C T Max. Operating Junction Temperature 175 j T Storage Temperature Range -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.75 th j-c 1 isc website www.iscsemi.com isc & is

 

Keywords - ALL TRANSISTORS. Principales características

 irf3205s.pdf Design, MOSFET, Power

 irf3205s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3205s.pdf Database, Innovation, IC, Electricity

 

 
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