irfp4468.pdf Principales características:
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4468 IIRFP4468 FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched And High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 195 A D I Drain Current-Single Pulsed 1120 A DM P Total Dissipation @T =25 520 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
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