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irfr120z.pdf Principales características:

irfr120zirfr120z

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120Z FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 8.7 A D I Drain Current-Single Pulsed 35 A DM P Total Dissipation @T =25 35 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 4.28 Channel-to-ambient thermal resistance /W Rth(j-a) 110 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel MOSFE

 

Keywords - ALL TRANSISTORS. Principales características

 irfr120z.pdf Design, MOSFET, Power

 irfr120z.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr120z.pdf Database, Innovation, IC, Electricity

 

 
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