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mdp10n60gth.pdf Principales características:

mdp10n60gthmdp10n60gth

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP10N60GTH FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous@T =25 C 10 I A D 6.3 T =100 C I Drain Current-Single Pulsed 40 A DM P Total Dissipation 48 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 2.6 /W Rth(ch-a) Channel-to-ambient

 

Keywords - ALL TRANSISTORS. Principales características

 mdp10n60gth.pdf Design, MOSFET, Power

 mdp10n60gth.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mdp10n60gth.pdf Database, Innovation, IC, Electricity

 

 
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