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spa15n60c3.pdf Principales características:

spa15n60c3spa15n60c3

isc N-Channel MOSFET Transistor SPA15N60C3 FEATURES Drain-source on-resistance RDS(on) 0.28 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 15 A D I Drain Current-Single Pulsed 45 A DM P Total Dissipation @T =25 34 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 3.7 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPA15N60C3 ELECTRICAL CHARACTERISTIC

 

Keywords - ALL TRANSISTORS. Principales características

 spa15n60c3.pdf Design, MOSFET, Power

 spa15n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spa15n60c3.pdf Database, Innovation, IC, Electricity

 

 

 


 
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