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spa15n60cfd.pdf Principales características:

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous @Tc=25 13.4 I A D 8.4 (V at 10V) Tc=100 GS I Drain Current-Single Pulsed 33 A DM P Total Dissipation @T =25 34 W D C Tj Max. Operating Junction Temperature 150 Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 3.7 /W Rth(ch-a) Channe

 

Keywords - ALL TRANSISTORS. Principales características

 spa15n60cfd.pdf Design, MOSFET, Power

 spa15n60cfd.pdf RoHS Compliant, Service, Triacs, Semiconductor

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