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spb04n60c3.pdf Principales características:

spb04n60c3spb04n60c3

Isc N-Channel MOSFET Transistor SPB04N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GSS Drain Current-ContinuousTc=25 4.5 I A D 2.8 Tc=100 I Drain Current-Single Pulsed 13.5 A DM P Total Dissipation @T =25 31 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 2.5 /W Rth(ch-a) Channel-to-ambient thermal resistance 62 1 isc website www.iscsemi.cn isc & i

 

Keywords - ALL TRANSISTORS. Principales características

 spb04n60c3.pdf Design, MOSFET, Power

 spb04n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spb04n60c3.pdf Database, Innovation, IC, Electricity

 

 

 


 
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